2007. 3. 22 1/5 semiconductor technical data KMB6D6N30Q n-ch trench mosfet revision no : 1 general description switching regulator and dc-dc converter applications. it s mainly suitable for power management in pc, portable equipment and battery powered systems. features v dss =30v, i d =6.6a. low drain-source on resistance. : r ds(on) =28m (typ.) @ v gs =10v : r ds(on) =56m (typ.) @ v gs =4.5v super high dense cell design. high power and current handling capability. maximum rating (ta=25 ) flp-8 (1) g h p t millimeters b2 g h l d a b1 dim p d l t 1.27 typ. 5.05+0.25/-0.20 3.90 0.3 + _ 0.42 0.1 + _ 0.15 0.1 + _ 6.00 0.4 + _ 1.4 0.2 + _ 0.20 0.05 + _ 0.5 0.2 + _ b2 b1 1 4 5 8 a 1 2 3 4 8 7 6 5 s s s g d d d d g sss d ddd pin connection (top view) characteristic symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v drain current dc i d * 6.6 a pulsed (note1) i dp * 26 source-drain diode current i s 1.7 a drain power dissipation p d * 2.5 w maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal resistance, junction to ambient r thja * 50 /w * : surface mounted on fr4 board, t 10sec.
2007. 3. 22 2/5 KMB6D6N30Q revision no : 1 electrical characteristics (ta=25 ) note 1) pulse test : pulse width 300 , duty cycle 2%. note 2) guaranteed by design. not subject to production testing. characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v, 30 - - v drain cut-off current i dss v gs =0v, v ds =24v - - 1 a gate leakage current i gss v gs = 20v, v ds =0v - - 100 na gate threshold voltage v th v ds =v gs, i d =250 a 1.0 1.7 2.5 v drain-source on resistance r ds(on) v gs =10v, i d =6a (note 1) - 20 28 m v gs =4.5v, i d =3a (note 1) - 42 56 on state drain current i d(on) v gs =10v, v ds =5v (note 1) 20 - - a forward transconductance g fs v ds =5v, i d =6a (note 1) - 8 - s source-drain diode forward voltage v sd i s =1.7a, v gs =0v (note 1) - 0.79 1.2 v dynamic (note 2) total gate charge q g v ds =15v, i d =6a, v gs =10v (fig.1) - 13.5 - nc v ds =15v, i d =6a, v gs =4.5v (fig.1) - 7.1 - gate-source charge q gs v ds =15v, i d =6a, v gs =4.5v (fig.1) - 3 - gate-drain charge q gd - 2.8 - turn-on delay time t d(on) v dd =15v, i d =1a, v gs =10v, r g =10 (fig.2) - 12.7 - ns turn-on rise time t r - 4.1 - turn-off delay time t d(off) - 19.4 - turn-off fall time t f - 12.9 - input capacitance c iss v ds =15v, v gs =0v, f=1.0mhz - 630 - pf output capacitance c oss - 170 - reverse transfer capacitance c rss - 110 -
2007. 3. 22 3/5 KMB6D6N30Q revision no : 1 gate - source voltage v gs (v) i d - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 0 0.5 4 8 12 16 20 1.0 1.5 2.0 2.5 3.0 5 15 0 10 25 20 1.6 3.2 04.8 0.8 2.4 4.0 i d - v gs i s - v sd drain current i d (a) drain current i d (a) r ds(on) - t j -75 -50 -25 25 50 75 125 100 0 reverse drain current i s (a) capacitance (pf) 1 10 20 0.2 0.8 1.2 0.6 1.0 0.4 source - drain voltage v sd (v) v gs = 0v normalized threshold voltage v th v th - t j c - v ds -75 -50 -25 0.6 0.8 0.9 0.7 1.3 1.0 1.1 1.2 0.6 0.8 1.4 1.8 1.0 1.6 1.2 050100 25 25 125 75 10 15 0 5 20 30 normalized on resistance junction temperature tj ( ) c junction temperature tj ( ) c 0 200 1200 1000 400 600 800 v gs =4.5v v gs =10v v gs =5v v gs =4v v gs =3.5v v gs =3v v ds = v gs i ds = 250 a v gs = 10v i d = 6a c oss c iss c rss 25 c -55 c 125 c
2007. 3. 22 4/5 KMB6D6N30Q revision no : 1 gate - charge q g (nc) 0 10 6 2 4 8 24 18 6 12 0 21 9 15 3 q g - v gs gate - source voltage v gs (v) v d = 15v i d = 6a square wave pulse duration ( sec ) 10 1 10 1 10 2 10 -3 10 -2 10 -1 1 10 3 10 -5 10 -4 r th normalized transient thermal resistance 10 -1 10 -2 1 1. r thja(t) = r(t) *r thja 2. r thja = see data sheet 3. t jm -t a =p dm *r thja(t) 4. duty cycle, d=t1/t2 t 1 t 2 p dm single pluse 0.01 0.02 0.1 0.2 0.5 0.05
2007. 3. 22 5/5 KMB6D6N30Q revision no : 1 fig. 1 gate charge v gs 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig. 2 resistive load switching v ds v gs v ds v gs 1.0 ma schottky diode 10 v 10 ? r l 0.5 v dss 0.5 v dss
|
